Exploring Topological Semi-Metals for Interconnects

The size of transistors has drastically reduced over the years. Interconnects have likewise also been scaled down. Today, conventional copper (Cu)-based interconnects face a significant impediment to further scaling since their electrical conductivity decreases at smaller dimensions, which worsens signal delay and energy consumption. As result, alternative scalable materials such as semi-metals 2D were being investigated potential Cu replacements. In this paper, we experimentally showed that CoPt can provide better resistivity than thin dimensions proposed hybrid poly-Si with coating for local routing in standard cells compactness. We evaluated performance gain DRAM/eDRAM, area vs. trade-off D-Flip-Flop (DFF) using film CoPt. gained up 3-fold reduction 15.6% cell interconnect. studied system-level interconnect design NbAs, topological semi-metal high electron mobility nanoscale, demonstrated its advantages terms resistivity, propagation delay, slew rate. Our simulations revealed NbAs could reduce by 35.88%. NbAs-based cache memories observed an instructions per cycle (IPC) improvement 23.8%.